Trap-limited transport in SCLC devices

With Professor Jason Röhr, I derived an analytical model that extracts trap density in single-carrier semiconductor devices directly from measured current and voltage data. Trap density is a key parameter for how well a device performs, but there has not been a reliable way to measure it experimentally, so this model calculates it directly from data researchers already collect. A manuscript on this work is in preparation.

We are also working with an external research team to build a machine learning pipeline that models single-carrier semiconductor devices. The goal is to extract both charge mobility and trap density, two parameters critical to device performance.